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| SLD-70C2 Planar Photodiode Features * Planar photodiode * Low capacitance * Fast switching time * Low leakage current * Linear response vs irradiance * Multiple dark current ranges available Description The planar photodiode is designed to operate in either photoconductive or photovoltaic modes. High sensitivity and low dark current allow use in even low irradiance applications. The photodiode is supplied on a ceramic base with a clear epoxy dome package. Absolute Maximum Ratings Storage Temperature Operating Temperature Soldering Temperature (3) 1.9 Optical Clear Epoxy 38 nom. Red dot Anode 7.2 5.1 6.3 3.4 max. Chip Size = 3.6 mm X 3.6 mm Active Area = 9.8 sq.mm. 0.50 - 0.52 Cathode Dimensions in mm.(+/- 0.2) Directional Sensitivity Characteristics -20C to +75C -20C to +75C 260C 40 50 30 20 10 1.0 0.8 0.6 0.4 0.2 0.0 Half Angle = 60 Notes: (1) Ee = source @ 2854K. (2) Ee = source @ = 880 nm (3) >2 mm from case for < 5 sec. 60 70 80 90 100 1.0 0.8 0.6 0.4 20 40 60 80 100 120 Electrical Characteristics (TA=25C unless otherwise noted) Symbol Parameter MIN TYP ISC Short Circuit Current 450 700 VOC Open Circuit Voltage 0.40 ID Reverse Dark Current: SLD-70C2A SLD-70C2B SLD-70C2C SLD-70C2D SLD-70C2E CJ Junction Capacitance 180 tR Rise Time 4 tF Fall Time 6 TCI Temp. Coef., ISC +0.2 VBR Reverse Breakdown Voltage 50 Maximum Sensitivity Wavelength 930 P Sensitivity Spectral Range 400 R Acceptance Half Angle 60 1/2 Specifications subject to change without notice. MAX UNITS TEST CONDITIONS VR=0V, Ee=25mW/cm2 (1) A V Ee=25mw/cm2 (1) nA nA nA nA nA pF s s %/C V nm nm deg VR=100mV, Ee=0 VR=5V, Ee=0 VR=5V, Ee=0 VR=5V, Ee=0 VR=5V, Ee=0 VR=0, Ee=0, f=1MHz VR=5V, RL=1k (2) VR=5V, RL=1k (2) (1) IR=100A 100 100 20 5 1 1100 (off center-line) 101407 REV 4 5200 St. Patrick St., Montreal Que., H4E 4N9, Canada Tel: 514-768-8000 Fax: 514-768-8889 QF-84 The Old Railway, Princes Street Ulverston, Cumbria, LA12 7NQ, UK Tel: 01 229 581 551 Fax: 01 229 581 554 |
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